NXH020P120MNF1PG
onsemi
onsemi
PIM F1 SIC HALFBRIDGE 1200V 20MO
$104.98
Available to order
Reference Price (USD)
1+
$104.98429
500+
$103.9344471
1000+
$102.8846042
1500+
$101.8347613
2000+
$100.7849184
2500+
$99.7350755
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
onsemi NXH020P120MNF1PG is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
NXH020P120MNF1PG
$104.98
Product details
The NXH020P120MNF1PG from onsemi is a high-reliability MOSFET array in the Discrete Semiconductor Products category, part of the Transistors - FETs, MOSFETs - Arrays subcategory. Designed for demanding applications, this product offers superior power handling and switching efficiency.\n\nKey features of the NXH020P120MNF1PG include fast switching speeds, low power dissipation, and robust thermal performance. The array format provides multiple transistors in a single package, optimizing space and improving design flexibility. Its high-quality construction ensures durability and consistent performance.\n\nThis MOSFET array is ideal for use in power tools, HVAC systems, and security equipment. Power tools benefit from its high current handling and efficiency. HVAC systems utilize its reliability for temperature and fan control. Security equipment relies on its precision for sensor and alarm systems.\n\nIntegrate the NXH020P120MNF1PG into your next project. Contact us for pricing and technical details. Our experts are here to help you find the best solutions for your applications.
General specs
- Product Status: Active
- FET Type: 2 N-Channel (Dual) Common Source
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
- Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 20V
- Vgs(th) (Max) @ Id: 4.3V @ 20mA
- Gate Charge (Qg) (Max) @ Vgs: 213.5nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 2420pF @ 800V
- Power - Max: 119W (Tj)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
Viewed products