NVD5C648NLT4G
onsemi
onsemi
MOSFET N-CH 60V 18A/89A DPAK
$1.44
Available to order
Reference Price (USD)
2,500+
$0.69316
Exquisite packaging
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| EMS | 3-7 days |
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NVD5C648NLT4G
$1.44
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 89A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 4.1mOhm @ 45A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 72W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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