Shopping cart

Subtotal: $0.00

NVD4806NT4G-VF01

onsemi
NVD4806NT4G-VF01 Preview
onsemi
NVD4806 - SINGLE N-CHANNEL POWER
$0.37
Available to order
Reference Price (USD)
1+
$0.37000
500+
$0.3663
1000+
$0.3626
1500+
$0.3589
2000+
$0.3552
2500+
$0.3515
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

onsemi NVD4806NT4G-VF01 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
NVD4806NT4G-VF01

NVD4806NT4G-VF01

$0.37

Product details

onsemi's NVD4806NT4G-VF01 stands out in the Discrete Semiconductor Products market as a top-tier single MOSFET transistor in the Transistors - FETs, MOSFETs - Single segment. This component combines cutting-edge semiconductor technology with practical design features for superior electrical performance. The NVD4806NT4G-VF01 demonstrates exceptional characteristics including low gate charge, excellent switching behavior, and reliable overcurrent protection. These features translate to reduced power losses and extended device lifespan in your applications. The transistor's robust construction ensures stable operation in challenging environmental conditions, from temperature extremes to mechanical stress. Industrial engineers will appreciate its versatility in robotics control systems, welding equipment, and power tool applications. For consumer electronics, it's perfect for high-end audio systems, gaming consoles, and smart home devices. The NVD4806NT4G-VF01 also performs exceptionally in renewable energy applications such as solar inverters and wind turbine controls. With its balanced performance metrics, this MOSFET provides the ideal solution for your power management needs. Ready to incorporate this high-quality component into your designs? Submit your inquiry through our user-friendly online platform for quick response and competitive pricing options.

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 79A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
  • Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 11.5V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 11.5 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2142 pF @ 12 V
  • FET Feature: -
  • Power Dissipation (Max): 1.4W (Ta), 68W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Viewed products

Vishay Siliconix

SIRA12DP-T1-GE3

$0.00 (not set)
onsemi

NTTFS5C670NLTWG

$0.00 (not set)
NXP USA Inc.

BUK9E8R5-40E,127

$0.00 (not set)
Vishay Siliconix

SQM40N10-30_GE3

$0.00 (not set)
Toshiba Semiconductor and Storage

TK40A10N1,S4X

$0.00 (not set)
Nexperia USA Inc.

PSMN057-200B,118

$0.00 (not set)
Vishay Siliconix

SI4168DY-T1-GE3

$0.00 (not set)
onsemi

FDMS86101DC

$0.00 (not set)
Rohm Semiconductor

RD3P050SNTL1

$0.00 (not set)
Microchip Technology

APT1201R5BVFRG

$0.00 (not set)
Top