NVBG080N120SC1
onsemi
onsemi
SICFET N-CH 1200V 30A D2PAK-7
$13.77
Available to order
Reference Price (USD)
1+
$13.77000
500+
$13.6323
1000+
$13.4946
1500+
$13.3569
2000+
$13.2192
2500+
$13.0815
Exquisite packaging
Discount
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| TNT | 2-6 days |
| EMS | 3-7 days |
onsemi NVBG080N120SC1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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NVBG080N120SC1
$13.77
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
- Vgs(th) (Max) @ Id: 4.3V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
- Vgs (Max): +25V, -15V
- Input Capacitance (Ciss) (Max) @ Vds: 1154 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 179W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK-7
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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