NVBG045N065SC1
onsemi
onsemi
SIC MOS D2PAK-7L 650V
$8.57
Available to order
Reference Price (USD)
1+
$8.56816
500+
$8.4824784
1000+
$8.3967968
1500+
$8.3111152
2000+
$8.2254336
2500+
$8.139752
Exquisite packaging
Discount
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| TNT | 2-6 days |
| EMS | 3-7 days |
onsemi NVBG045N065SC1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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NVBG045N065SC1
$8.57
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
- Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
- Vgs(th) (Max) @ Id: 4.3V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
- Vgs (Max): +22V, -8V
- Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 325 V
- FET Feature: -
- Power Dissipation (Max): 242W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK-7
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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