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NTH4LN095N65S3H

onsemi
NTH4LN095N65S3H Preview
onsemi
POWER MOSFET, N-CHANNEL, SUPERFE
$8.85
Available to order
Reference Price (USD)
1+
$8.85000
500+
$8.7615
1000+
$8.673
1500+
$8.5845
2000+
$8.496
2500+
$8.4075
Exquisite packaging
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onsemi NTH4LN095N65S3H is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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NTH4LN095N65S3H

NTH4LN095N65S3H

$8.85

Product details

The NTH4LN095N65S3H single MOSFET transistor from onsemi represents excellence in the Discrete Semiconductor Products category (Transistors - FETs, MOSFETs - Single). This high-efficiency component is engineered to meet the evolving demands of modern power electronics, offering superior switching performance and reliability. Key features of the NTH4LN095N65S3H include optimized gate drive characteristics, low conduction resistance, and excellent thermal properties. These attributes contribute to reduced power losses and improved system efficiency in various applications. The MOSFET performs exceptionally in agricultural automation systems, construction equipment electronics, and marine power systems. For consumer applications, it's ideal for high-performance kitchen appliances, personal care devices, and home entertainment systems. The component also excels in security system power management and emergency lighting applications. With its robust design and electrical efficiency, the NTH4LN095N65S3H provides design engineers with a reliable solution for diverse power control needs. Whether you're developing new products or upgrading existing systems, this MOSFET offers the performance and durability you require. Ready to explore how the NTH4LN095N65S3H can enhance your designs? Submit your inquiry through our online portal to receive prompt assistance from our technical sales team, including detailed specifications and competitive pricing information.

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 2.8mA
  • Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 2833 pF @ 400 V
  • FET Feature: -
  • Power Dissipation (Max): 208W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4
  • Package / Case: TO-247-4

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