NTH4L160N120SC1
onsemi
onsemi
SICFET N-CH 1200V 17.3A TO247
$5.89
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NTH4L160N120SC1
$5.89
Product details
Enhance your electronic designs with the NTH4L160N120SC1 single MOSFET transistor from onsemi, a premium Discrete Semiconductor Product in the Transistors - FETs, MOSFETs - Single classification. This power-efficient component excels in switching applications, delivering robust performance with minimal energy loss. The NTH4L160N120SC1 features an optimized gate drive characteristic that ensures smooth operation across various voltage ranges. Its compact design doesn't compromise on power handling capabilities, making it suitable for space-constrained applications. Notable advantages include superior noise immunity, stable operation under varying load conditions, and enhanced electrostatic discharge protection. These qualities make the NTH4L160N120SC1 particularly valuable for medical equipment, telecommunications infrastructure, and aerospace electronics. Implement this MOSFET in your next project involving DC-DC converters, load switches, or power distribution systems. The component's reliability and efficiency will significantly improve your system's overall performance. For engineers seeking quality MOSFET solutions, the NTH4L160N120SC1 represents an excellent choice. Visit our website to request a quote or submit your inquiry directly through our online portal for prompt assistance.
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 17.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V
- Vgs(th) (Max) @ Id: 4.3V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 20 V
- Vgs (Max): +25V, -15V
- Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 111W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4L
- Package / Case: TO-247-4
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