Shopping cart

Subtotal: $0.00

NTH4L022N120M3S

onsemi
NTH4L022N120M3S Preview
onsemi
SIC MOS TO247-4L 22MOHM 1200V
$36.15
Available to order
Reference Price (USD)
1+
$36.15000
500+
$35.7885
1000+
$35.427
1500+
$35.0655
2000+
$34.704
2500+
$34.3425
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

onsemi NTH4L022N120M3S is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
NTH4L022N120M3S

NTH4L022N120M3S

$36.15

Product details

The NTH4L022N120M3S single MOSFET from onsemi represents the pinnacle of Discrete Semiconductor Products in the Transistors - FETs, MOSFETs - Single category. Engineered for precision and reliability, this component offers outstanding electrical characteristics that benefit a wide range of electronic applications. Its advanced semiconductor technology ensures minimal conduction losses and efficient heat dissipation, critical factors in power-sensitive designs. The NTH4L022N120M3S features an optimized package design that enhances thermal performance while maintaining a compact footprint. Key benefits include improved switching efficiency, better load handling capacity, and enhanced protection against voltage spikes. These attributes make it indispensable for electric vehicle charging systems, uninterruptible power supplies, and industrial motor drives. In the consumer sector, it excels in high-efficiency adapters, laptop power systems, and advanced lighting solutions. The component's reliability also makes it suitable for critical infrastructure applications like data center power distribution and emergency backup systems. For design engineers seeking a MOSFET that combines performance with durability, the NTH4L022N120M3S delivers on all fronts. Take the next step in your project development use our online inquiry form to request detailed specifications and purchasing information today.

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 18V
  • Vgs(th) (Max) @ Id: 4.4V @ 20mA
  • Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 18 V
  • Vgs (Max): +22V, -10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3175 pF @ 800 V
  • FET Feature: -
  • Power Dissipation (Max): 352W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4L
  • Package / Case: TO-247-4

Viewed products

Infineon Technologies

IPP040N06N3GXKSA1

$0.00 (not set)
Diotec Semiconductor

DI050N04PT-AQ

$0.00 (not set)
Sanken

SKI03021

$0.00 (not set)
Alpha & Omega Semiconductor Inc.

AON6292

$0.00 (not set)
Infineon Technologies

IAUZ30N06S5L140ATMA1

$0.00 (not set)
Vishay Siliconix

SQM100P10-19L_GE3

$0.00 (not set)
Vishay Siliconix

SIHFB11N50A-E3

$0.00 (not set)
Diodes Incorporated

DMT6012LFDF-13

$0.00 (not set)
Alpha & Omega Semiconductor Inc.

AOB380A60CL

$0.00 (not set)
Panjit International Inc.

PJC7406_R1_00001

$0.00 (not set)
Top