NTC080N120SC1
onsemi
onsemi
SIC MOS WAFER SALES 80MOHM 1200V
$10.43
Available to order
Reference Price (USD)
1+
$10.42750
500+
$10.323225
1000+
$10.21895
1500+
$10.114675
2000+
$10.0104
2500+
$9.906125
Exquisite packaging
Discount
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| TNT | 2-6 days |
| EMS | 3-7 days |
onsemi NTC080N120SC1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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NTC080N120SC1
$10.43
Product details
General specs
- Product Status: Last Time Buy
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
- Vgs(th) (Max) @ Id: 4.3V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
- Vgs (Max): +25V, -15V
- Input Capacitance (Ciss) (Max) @ Vds: 1112 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 178W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
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