NSVT65011MW6T1G
onsemi
onsemi
TRANS 2NPN 65V 0.1A SC88-6
$0.48
Available to order
Reference Price (USD)
3,000+
$0.09900
6,000+
$0.09375
15,000+
$0.08588
30,000+
$0.08063
75,000+
$0.07450
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NSVT65011MW6T1G
$0.48
Product details
The NSVT65011MW6T1G from onsemi sets new standards in Bipolar Junction Transistor (BJT) Array technology for Discrete Semiconductor Products. This advanced component integrates multiple transistors with precisely matched characteristics in a space-saving package. Designed for demanding electronic applications, it offers superior current amplification and switching capabilities. The NSVT65011MW6T1G features excellent parameter consistency across all transistors in the array. Its robust construction ensures reliable operation in both pulsed and continuous modes. The product's optimized thermal design prevents performance degradation under load. With its low collector-emitter saturation voltage, it maximizes energy efficiency in circuits. The NSVT65011MW6T1G is ideal for applications requiring synchronized transistor operation. Industrial motor control systems benefit from its precise switching characteristics. LED lighting drivers utilize its efficient current regulation capabilities. Battery management systems employ it for accurate charge/discharge control. The NSVT65011MW6T1G also finds use in sophisticated RF amplification circuits. onsemi has incorporated advanced manufacturing techniques to ensure product reliability. Its compatibility with automated assembly processes streamlines production integration. The component meets international standards for quality and environmental compliance. Engineers trust the NSVT65011MW6T1G for critical applications where performance consistency is paramount. Its versatility makes it suitable for both prototyping and mass production scenarios. Discover how this BJT Array can enhance your electronic designs by contacting us for more information.
General specs
- Product Status: Active
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 65V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
- Power - Max: 380mW
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-88/SC70-6/SOT-363
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