Shopping cart

Subtotal: $0.00

NSVT65011MW6T1G

onsemi
NSVT65011MW6T1G Preview
onsemi
TRANS 2NPN 65V 0.1A SC88-6
$0.48
Available to order
Reference Price (USD)
3,000+
$0.09900
6,000+
$0.09375
15,000+
$0.08588
30,000+
$0.08063
75,000+
$0.07450
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

onsemi NSVT65011MW6T1G is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
NSVT65011MW6T1G

NSVT65011MW6T1G

$0.48

Product details

The NSVT65011MW6T1G from onsemi sets new standards in Bipolar Junction Transistor (BJT) Array technology for Discrete Semiconductor Products. This advanced component integrates multiple transistors with precisely matched characteristics in a space-saving package. Designed for demanding electronic applications, it offers superior current amplification and switching capabilities. The NSVT65011MW6T1G features excellent parameter consistency across all transistors in the array. Its robust construction ensures reliable operation in both pulsed and continuous modes. The product's optimized thermal design prevents performance degradation under load. With its low collector-emitter saturation voltage, it maximizes energy efficiency in circuits. The NSVT65011MW6T1G is ideal for applications requiring synchronized transistor operation. Industrial motor control systems benefit from its precise switching characteristics. LED lighting drivers utilize its efficient current regulation capabilities. Battery management systems employ it for accurate charge/discharge control. The NSVT65011MW6T1G also finds use in sophisticated RF amplification circuits. onsemi has incorporated advanced manufacturing techniques to ensure product reliability. Its compatibility with automated assembly processes streamlines production integration. The component meets international standards for quality and environmental compliance. Engineers trust the NSVT65011MW6T1G for critical applications where performance consistency is paramount. Its versatility makes it suitable for both prototyping and mass production scenarios. Discover how this BJT Array can enhance your electronic designs by contacting us for more information.

General specs

  • Product Status: Active
  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
  • Power - Max: 380mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363

Viewed products

Rohm Semiconductor

UMT1NTN

$0.00 (not set)
Microchip Technology

JANS2N6989U/TR

$0.00 (not set)
Diodes Incorporated

MMDT5401Q-7-F

$0.00 (not set)
Central Semiconductor Corp

CMLT5087EM TR PBFREE

$0.00 (not set)
Panjit International Inc.

MMDT4413_R1_00001

$0.00 (not set)
Nexperia USA Inc.

BC846BS,135

$0.00 (not set)
Solid State Inc.

2N2915A

$0.00 (not set)
Rohm Semiconductor

EMZ8T2R

$0.00 (not set)
Diodes Incorporated

BC857BSQ-7-F

$0.00 (not set)
Diodes Incorporated

ZXTC6719MCTA

$0.00 (not set)
Top