Shopping cart

Subtotal: $0.00

NSVT45010MW6T3G

onsemi
NSVT45010MW6T3G Preview
onsemi
TRANS 2PNP 45V 0.1A SC88
$0.08
Available to order
Reference Price (USD)
1+
$0.08000
500+
$0.0792
1000+
$0.0784
1500+
$0.0776
2000+
$0.0768
2500+
$0.076
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

onsemi NSVT45010MW6T3G is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
NSVT45010MW6T3G

NSVT45010MW6T3G

$0.08

Product details

The NSVT45010MW6T3G from onsemi sets new standards in Bipolar Junction Transistor (BJT) Array technology for Discrete Semiconductor Products. This advanced component integrates multiple transistors with precisely matched characteristics in a space-saving package. Designed for demanding electronic applications, it offers superior current amplification and switching capabilities. The NSVT45010MW6T3G features excellent parameter consistency across all transistors in the array. Its robust construction ensures reliable operation in both pulsed and continuous modes. The product's optimized thermal design prevents performance degradation under load. With its low collector-emitter saturation voltage, it maximizes energy efficiency in circuits. The NSVT45010MW6T3G is ideal for applications requiring synchronized transistor operation. Industrial motor control systems benefit from its precise switching characteristics. LED lighting drivers utilize its efficient current regulation capabilities. Battery management systems employ it for accurate charge/discharge control. The NSVT45010MW6T3G also finds use in sophisticated RF amplification circuits. onsemi has incorporated advanced manufacturing techniques to ensure product reliability. Its compatibility with automated assembly processes streamlines production integration. The component meets international standards for quality and environmental compliance. Engineers trust the NSVT45010MW6T3G for critical applications where performance consistency is paramount. Its versatility makes it suitable for both prototyping and mass production scenarios. Discover how this BJT Array can enhance your electronic designs by contacting us for more information.

General specs

  • Product Status: Active
  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
  • Power - Max: 380mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363

Viewed products

onsemi

NSVBC848CDW1T1G

$0.00 (not set)
Nexperia USA Inc.

BC847RAPNZ

$0.00 (not set)
Panjit International Inc.

BC847BS_R1_00001

$0.00 (not set)
Microchip Technology

JAN2N6987U/TR

$0.00 (not set)
Nexperia USA Inc.

PBSS4032SP,115

$0.00 (not set)
Microchip Technology

JANTXV2N5795A

$0.00 (not set)
Diodes Incorporated

MMDT2227Q-7-F

$0.00 (not set)
Diodes Incorporated

ZXTC6718MCTA

$0.00 (not set)
onsemi

SBC856BDW1T3G

$0.00 (not set)
NTE Electronics, Inc

NTE2018

$0.00 (not set)
Top