NSVMUN5113DW1T3G
onsemi
onsemi
TRANS PNP 50V DUAL BIPO SC88-3
$0.10
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Reference Price (USD)
10,000+
$0.08707
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NSVMUN5113DW1T3G
$0.10
Product details
The NSVMUN5113DW1T3G by onsemi is a cutting-edge pre-biased bipolar junction transistor (BJT) array, part of the Discrete Semiconductor Products family under Transistors - Bipolar (BJT) - Arrays, Pre-Biased. This product is designed to meet the needs of modern electronics, offering high efficiency and reliability. The NSVMUN5113DW1T3G features integrated pre-biasing, which streamlines circuit design and reduces component count. Its excellent thermal performance ensures consistent operation even in challenging environments. This BJT array is perfect for applications such as motor control, LED drivers, and power supplies. The NSVMUN5113DW1T3G provides high gain and low saturation voltage, making it ideal for precision tasks. It is also widely used in renewable energy systems, robotics, and IoT devices. The compact and robust design of the NSVMUN5113DW1T3G makes it suitable for both industrial and consumer applications. For engineers looking for a dependable and high-performance transistor array, the NSVMUN5113DW1T3G is an excellent choice. Submit your inquiry now to get detailed information on pricing and delivery options tailored to your needs.
General specs
- Product Status: Active
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 47kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 1V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-88/SC70-6/SOT-363
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