NSVB1706DMW5T1G
onsemi
onsemi
TRANS 2NPN PREBIAS 0.25W SC88-A
$0.17
Available to order
Reference Price (USD)
6,000+
$0.07900
Exquisite packaging
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NSVB1706DMW5T1G
$0.17
Product details
Enhance your electronic designs with the NSVB1706DMW5T1G from onsemi, a top-grade pre-biased bipolar junction transistor (BJT) array. This product is part of the Discrete Semiconductor Products category, specifically Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The NSVB1706DMW5T1G is designed to deliver exceptional performance in amplification and switching applications, offering high reliability and efficiency. Its pre-biased configuration simplifies circuit design and enhances overall performance. The transistor array features excellent thermal management, ensuring stable operation in various environments. Perfect for power management systems, audio amplifiers, and sensor interfaces, the NSVB1706DMW5T1G provides consistent and accurate results. It is also commonly used in medical devices, telecommunications equipment, and home automation systems. With its high gain and low power consumption, the NSVB1706DMW5T1G is ideal for energy-efficient applications. The durable and compact design of this BJT array makes it a versatile choice for diverse projects. To learn more about how the NSVB1706DMW5T1G can benefit your project, contact us for a detailed quote and expert technical support.
General specs
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 4.7kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 187mW
- Mounting Type: Surface Mount
- Package / Case: 5-TSSOP, SC-70-5, SOT-353
- Supplier Device Package: SC-88A (SC-70-5/SOT-353)
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