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NSV1C200MZ4T1G

onsemi
NSV1C200MZ4T1G Preview
onsemi
TRANS PNP 100V 2A SOT223
$0.63
Available to order
Reference Price (USD)
1,000+
$0.25918
2,000+
$0.23632
5,000+
$0.22107
10,000+
$0.20582
25,000+
$0.20328
Exquisite packaging
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onsemi NSV1C200MZ4T1G is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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NSV1C200MZ4T1G

NSV1C200MZ4T1G

$0.63

Product details

Experience superior semiconductor performance with the NSV1C200MZ4T1G, a high-efficiency Bipolar Junction Transistor from onsemi. As part of the Discrete Semiconductor Products catalog, this single BJT delivers optimal characteristics for both switching and amplification functions. The transistor features excellent high-frequency response and linear gain characteristics throughout its operating range. Its optimized geometry minimizes parasitic elements that can affect circuit stability. The NSV1C200MZ4T1G demonstrates remarkable thermal stability, maintaining performance across environmental conditions. Design applications range from small-signal preamplifiers to power driver stages in various electronic systems. Telecommunications infrastructure, automotive control modules, and industrial sensors frequently incorporate this versatile component. onsemi produces the NSV1C200MZ4T1G using advanced wafer fabrication and assembly techniques. The transistor's packaging options include both through-hole and surface-mount variants for design flexibility. With its proven reliability and technical specifications, the NSV1C200MZ4T1G stands out in competitive BJT offerings. To discuss customization options or request samples, complete our convenient online contact form for prompt assistance from our technical sales team.

General specs

  • Product Status: Active
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2 A
  • Voltage - Collector Emitter Breakdown (Max): 100 V
  • Vce Saturation (Max) @ Ib, Ic: 220mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
  • Power - Max: 800 mW
  • Frequency - Transition: 120MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223 (TO-261)

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