Shopping cart

Subtotal: $0.00

NSV12100UW3TCG

onsemi
NSV12100UW3TCG Preview
onsemi
TRANS PNP 12V 1A 3WDFN
$0.30
Available to order
Reference Price (USD)
3,000+
$0.33160
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

onsemi NSV12100UW3TCG is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
NSV12100UW3TCG

NSV12100UW3TCG

$0.30

Product details

Enhance your electronic designs with the NSV12100UW3TCG, a premium Bipolar Junction Transistor (BJT) from onsemi. This single BJT transistor belongs to the Discrete Semiconductor Products family and is engineered for optimal switching and amplification tasks. The NSV12100UW3TCG features low saturation voltage and high current gain, ensuring efficient operation in diverse circuits. Its excellent thermal performance prevents overheating, even during prolonged use. The transistor's reliable switching speed makes it suitable for both analog and digital applications. Common uses include audio amplifiers, power regulators, and signal processing modules. Automotive systems, industrial controls, and consumer electronics can all benefit from this versatile component. The NSV12100UW3TCG is designed to meet rigorous quality standards, providing long-term reliability. Compact and lightweight, it's perfect for space-constrained applications. Ready to incorporate this high-quality BJT into your next project? Contact us for more details and pricing options tailored to your needs.

General specs

  • Product Status: Active
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 12 V
  • Vce Saturation (Max) @ Ib, Ic: 440mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
  • Power - Max: 740 mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-WDFN Exposed Pad
  • Supplier Device Package: 3-WDFN (2x2)

Viewed products

Nexperia USA Inc.

PBSS8110X,135

$0.00 (not set)
NTE Electronics, Inc

NTE2312

$0.00 (not set)
Microchip Technology

JANTXV2N2906AL

$0.00 (not set)
Microchip Technology

JANTX2N3772

$0.00 (not set)
onsemi

2SA2169-TL-E

$0.00 (not set)
onsemi

KSD471ACYBU

$0.00 (not set)
onsemi

SS8550CTA

$0.00 (not set)
Diodes Incorporated

BCX5516TA

$0.00 (not set)
Infineon Technologies

BFN19H6327XTSA1

$0.00 (not set)
Nexperia USA Inc.

PHPT60610PYX

$0.00 (not set)
Top