NSTR1P02T1G
onsemi
onsemi
PFET SOT23 20V 1A 180MOHM
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NSTR1P02T1G
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Product details
The NSTR1P02T1G from onsemi is a high-performance RF MOSFET transistor designed for demanding applications in the discrete semiconductor products category. This transistor excels in radio frequency (RF) amplification, offering superior signal clarity and efficiency. Ideal for both low-noise and high-power scenarios, it ensures reliable performance in critical circuits. With its advanced FET technology, the NSTR1P02T1G delivers exceptional gain and stability, making it a top choice for RF designs. Its robust construction guarantees durability even in harsh operating conditions. The NSTR1P02T1G is engineered to minimize power loss while maximizing output, ensuring optimal energy utilization. Whether for commercial or industrial use, this MOSFET transistor stands out for its precision and reliability. Its compact design allows for easy integration into various circuit layouts. The NSTR1P02T1G is a versatile solution for modern electronic systems requiring high-frequency operation. Trust onsemi for cutting-edge semiconductor technology that meets the highest standards. Key features include low distortion, high linearity, and excellent thermal management. These attributes make the NSTR1P02T1G suitable for a wide range of RF applications. Common uses include wireless communication systems, radar equipment, and broadcast transmitters. It is also ideal for medical devices, automotive electronics, and industrial automation systems. The NSTR1P02T1G ensures consistent performance across all these applications. For engineers seeking a dependable RF MOSFET, the NSTR1P02T1G is an outstanding option. Ready to enhance your RF designs with this high-quality transistor? Contact us today for pricing and availability. Submit your inquiry online to get started with the NSTR1P02T1G from onsemi.
General specs
- Product Status: Active
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