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NSTB60BDW1T1G

onsemi
NSTB60BDW1T1G Preview
onsemi
TRANS PREBIAS 1NPN 1PNP 50V SC88
$0.32
Available to order
Reference Price (USD)
3,000+
$0.05160
6,000+
$0.04511
15,000+
$0.03863
30,000+
$0.03646
75,000+
$0.03430
150,000+
$0.03069
Exquisite packaging
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onsemi NSTB60BDW1T1G is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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NSTB60BDW1T1G

NSTB60BDW1T1G

$0.32

Product details

The NSTB60BDW1T1G by onsemi is a high-quality pre-biased bipolar junction transistor (BJT) array, categorized under Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased. This product is designed to provide exceptional performance in various electronic applications, ensuring reliability and efficiency. The NSTB60BDW1T1G features integrated pre-biasing, which minimizes external components and simplifies design. Its excellent thermal stability guarantees consistent operation under diverse conditions. This BJT array is ideal for applications such as signal amplification, load switching, and interface circuits. The NSTB60BDW1T1G is also widely used in industrial automation, consumer electronics, and telecommunications. With its high gain and low noise performance, it is perfect for sensitive and precision-driven tasks. The compact and durable design of the NSTB60BDW1T1G makes it suitable for both high-volume and specialized applications. Engineers and designers can rely on this transistor array for its consistent quality and performance. For more information on the NSTB60BDW1T1G and to receive a customized quote, please submit an inquiry and our team will respond promptly.

General specs

  • Product Status: Active
  • Transistor Type: 1 NPN Pre-Biased, 1 PNP
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 22kOhms
  • Resistor - Emitter Base (R2): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 120 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA / 500mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 140MHz
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363

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