NSS40301MDR2G
onsemi
onsemi
TRANS 2NPN 40V 3A 8SOIC
$0.95
Available to order
Reference Price (USD)
2,500+
$0.30638
5,000+
$0.28643
12,500+
$0.28310
Exquisite packaging
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NSS40301MDR2G
$0.95
Product details
onsemi's NSS40301MDR2G represents the pinnacle of Bipolar Junction Transistor (BJT) Array technology within Discrete Semiconductor Products. This innovative solution combines multiple transistors in a single package, optimized for synchronized operation. The NSS40301MDR2G delivers exceptional current handling capacity with minimal voltage drop across junctions. Its symmetrical design ensures identical performance characteristics for all included transistors. The product features enhanced electrostatic discharge protection for improved reliability. With its wide operating temperature range, it performs consistently in diverse environments. The NSS40301MDR2G is particularly valuable for applications requiring matched transistor pairs or groups. Its low saturation voltage contributes to energy-efficient circuit designs. This BJT Array demonstrates excellent frequency response for high-speed applications. Common applications include precision voltage regulators in power supply units. Audio processing equipment benefits from its low distortion characteristics. Test and measurement instruments utilize its stable parameters for accurate readings. The NSS40301MDR2G also serves critical functions in aerospace electronics systems. onsemi has engineered this product to meet rigorous industry standards for quality and performance. Its lead-free construction complies with modern environmental regulations. For engineers seeking reliable, high-performance transistor arrays, the NSS40301MDR2G offers an optimal solution. Visit our website to submit your inquiry about this versatile semiconductor component today.
General specs
- Product Status: Active
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 115mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V
- Power - Max: 653mW
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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