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NSR201MXT5G

onsemi
NSR201MXT5G Preview
onsemi
RF SCHOTTKY BARRIER DIODE
$0.58
Available to order
Reference Price (USD)
8,000+
$0.15400
16,000+
$0.14900
Exquisite packaging
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NSR201MXT5G

NSR201MXT5G

$0.58

Product details

Experience superior rectification performance with the NSR201MXT5G single diode from onsemi, engineered for excellence in power electronics. This component offers an optimal balance between forward voltage characteristics and reverse leakage current, ensuring efficient energy conversion. The diode's advanced construction provides excellent thermal stability and long-term reliability in continuous operation. Designers will appreciate its versatility in applications ranging from consumer appliances to industrial power systems. The NSR201MXT5G performs exceptionally well in UPS systems, electric vehicle power trains, and renewable energy converters. Its robust design withstands electrical transients and mechanical stress, making it ideal for transportation and infrastructure applications. Additional benefits include consistent batch-to-batch performance and compatibility with automated assembly processes. For engineers seeking a reliable rectification solution, the NSR201MXT5G delivers outstanding results. Contact us today to learn more about this high-performance diode and its applications.

General specs

  • Product Status: Active
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 2 V
  • Current - Average Rectified (Io): 50mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: 0.15pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 2-XDFN
  • Supplier Device Package: 2-X2DFN (1x0.6)
  • Operating Temperature - Junction: -55°C ~ 150°C

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