NSBC114EPDXV6T5G
onsemi
onsemi
TRANS PREBIAS NPN/PNP 50V SOT563
$0.07
Available to order
Reference Price (USD)
1+
$0.07022
500+
$0.0695178
1000+
$0.0688156
1500+
$0.0681134
2000+
$0.0674112
2500+
$0.066709
Exquisite packaging
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NSBC114EPDXV6T5G
$0.07
Product details
Upgrade your electronic projects with the NSBC114EPDXV6T5G from onsemi, a superior pre-biased bipolar junction transistor (BJT) array. This product belongs to the Discrete Semiconductor Products category, specifically Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The NSBC114EPDXV6T5G is designed to deliver high performance in amplification and switching tasks, offering reliability and efficiency. Its pre-biased configuration reduces circuit complexity and enhances functionality. The transistor array boasts excellent thermal management, ensuring stable performance in various environments. Perfect for use in power converters, audio amplifiers, and sensor circuits, the NSBC114EPDXV6T5G provides consistent and accurate results. It is also commonly utilized in automotive electronics, medical devices, and smart home systems. With its high gain and low power consumption, the NSBC114EPDXV6T5G is ideal for energy-efficient applications. The robust and compact design of this BJT array makes it a versatile choice for diverse projects. To learn more about the NSBC114EPDXV6T5G and how it can benefit your designs, contact us for a detailed quote and expert advice.
General specs
- Product Status: Last Time Buy
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 500mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
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