NSBA124EDXV6T1
onsemi
onsemi
TRANS 2PNP PREBIAS 0.5W SOT563
$0.04
Available to order
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$0.04000
500+
$0.0396
1000+
$0.0392
1500+
$0.0388
2000+
$0.0384
2500+
$0.038
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NSBA124EDXV6T1
$0.04
Product details
Enhance your electronic designs with the NSBA124EDXV6T1 from onsemi, a premium pre-biased bipolar junction transistor (BJT) array. This product falls under the Discrete Semiconductor Products category, specifically Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The NSBA124EDXV6T1 is engineered to deliver superior performance in amplification and switching tasks, offering unmatched reliability and efficiency. Its pre-biased configuration simplifies circuit design, reducing the need for additional components. The transistor array features excellent thermal management, ensuring stable operation under varying conditions. Ideal for use in power management systems, audio amplifiers, and sensor interfaces, the NSBA124EDXV6T1 provides consistent results. Its high gain and low noise characteristics make it a preferred choice for sensitive applications. The NSBA124EDXV6T1 is also commonly used in medical devices, telecommunications equipment, and home automation systems. With its durable design and long lifespan, this BJT array is a cost-effective solution for demanding environments. To learn more about how the NSBA124EDXV6T1 can benefit your project, contact us for a detailed quote and technical support.
General specs
- Product Status: Obsolete
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 22kOhms
- Resistor - Emitter Base (R2): 22kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 500mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
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