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NSBA114EF3T5G

onsemi
NSBA114EF3T5G Preview
onsemi
TRANS PREBIAS PNP 50V SOT1123
$0.08
Available to order
Reference Price (USD)
8,000+
$0.10305
Exquisite packaging
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EMS 3-7 days

onsemi NSBA114EF3T5G is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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NSBA114EF3T5G

NSBA114EF3T5G

$0.08

Product details

Optimized for space-constrained designs, the NSBA114EF3T5G pre-biased BJT from onsemi integrates critical biasing elements into a single package. This surface-mount device exhibits minimal leakage currents and consistent hFE characteristics across production batches. Its primary use cases involve power management in wearable devices, interface circuits for industrial sensors, and driver stages in low-voltage displays. The transistor's lead-free construction complies with global environmental standards, while its matte tin plating enhances solderability. Designers appreciate its predictable behavior in temperature-varying conditions, making it suitable for outdoor electronics. Explore volume discounts submit your requirements via our online portal for customized offers.

General specs

  • Product Status: Active
  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1): 10 kOhms
  • Resistor - Emitter Base (R2): 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 254 mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1123
  • Supplier Device Package: SOT-1123

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