NRVTS860PFST3G
onsemi

onsemi
DIODE SCHOTTKY 8A 60V TO277-3
$0.36
Available to order
Reference Price (USD)
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$0.36221
500+
$0.3585879
1000+
$0.3549658
1500+
$0.3513437
2000+
$0.3477216
2500+
$0.3440995
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Product details
Experience superior rectification performance with the NRVTS860PFST3G single diode from onsemi, engineered for excellence in power electronics. This component offers an optimal balance between forward voltage characteristics and reverse leakage current, ensuring efficient energy conversion. The diode's advanced construction provides excellent thermal stability and long-term reliability in continuous operation. Designers will appreciate its versatility in applications ranging from consumer appliances to industrial power systems. The NRVTS860PFST3G performs exceptionally well in UPS systems, electric vehicle power trains, and renewable energy converters. Its robust design withstands electrical transients and mechanical stress, making it ideal for transportation and infrastructure applications. Additional benefits include consistent batch-to-batch performance and compatibility with automated assembly processes. For engineers seeking a reliable rectification solution, the NRVTS860PFST3G delivers outstanding results. Contact us today to learn more about this high-performance diode and its applications.
General specs
- Product Status: Active
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 640 mV @ 8 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 70 µA @ 60 V
- Capacitance @ Vr, F: 870pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277-3
- Operating Temperature - Junction: -55°C ~ 175°C