NRVBM110LT1G
onsemi
onsemi
DIODE SCHOTTKY 10V 1A POWERMITE
$0.17
Available to order
Reference Price (USD)
3,000+
$0.16198
Exquisite packaging
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| EMS | 3-7 days |
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NRVBM110LT1G
$0.17
Product details
Experience superior rectification performance with the NRVBM110LT1G single diode from onsemi, engineered for excellence in power electronics. This component offers an optimal balance between forward voltage characteristics and reverse leakage current, ensuring efficient energy conversion. The diode's advanced construction provides excellent thermal stability and long-term reliability in continuous operation. Designers will appreciate its versatility in applications ranging from consumer appliances to industrial power systems. The NRVBM110LT1G performs exceptionally well in UPS systems, electric vehicle power trains, and renewable energy converters. Its robust design withstands electrical transients and mechanical stress, making it ideal for transportation and infrastructure applications. Additional benefits include consistent batch-to-batch performance and compatibility with automated assembly processes. For engineers seeking a reliable rectification solution, the NRVBM110LT1G delivers outstanding results. Contact us today to learn more about this high-performance diode and its applications.
General specs
- Product Status: Last Time Buy
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 10 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 415 mV @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500 µA @ 10 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-216AA
- Supplier Device Package: Powermite
- Operating Temperature - Junction: -55°C ~ 125°C
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