NGTG35N65FL2WG
onsemi
onsemi
IGBT FIELD STOP 650V 70A TO247-3
$3.71
Available to order
Reference Price (USD)
1+
$4.31000
30+
$3.46500
120+
$3.15700
510+
$2.55639
1,020+
$2.15600
Exquisite packaging
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NGTG35N65FL2WG
$3.71
Product details
Enhance your power control systems with the NGTG35N65FL2WG single IGBT transistor from onsemi. This high-performance component is tailored for applications demanding efficient energy conversion and minimal heat generation. The NGTG35N65FL2WG is widely used in wind turbine inverters, HVAC systems, and medical power supplies, thanks to its exceptional reliability and fast response times. Its advanced architecture ensures low conduction losses and high switching frequencies, making it a top choice for modern power electronics. Whether you're upgrading existing systems or designing new ones, the NGTG35N65FL2WG offers the flexibility and performance you need. Submit your inquiry online to learn more about this versatile IGBT transistor.
General specs
- Product Status: Obsolete
- IGBT Type: Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 70 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A
- Power - Max: 300 W
- Switching Energy: 840µJ (on), 280µJ (off)
- Input Type: Standard
- Gate Charge: 125 nC
- Td (on/off) @ 25°C: 72ns/132ns
- Test Condition: 400V, 35A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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