NGTB35N60FL2WG
onsemi
onsemi
IGBT TRENCH/FS 600V 70A TO247
$4.19
Available to order
Reference Price (USD)
1+
$4.54000
30+
$3.87967
120+
$3.38125
510+
$2.89963
1,020+
$2.46776
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NGTB35N60FL2WG
$4.19
Product details
The NGTB35N60FL2WG by onsemi is a cutting-edge single IGBT transistor designed for high-power applications. This discrete semiconductor product excels in environments where efficiency and durability are paramount. Featuring excellent thermal conductivity and low switching losses, the NGTB35N60FL2WG is ideal for use in electric vehicle charging stations, welding equipment, and industrial automation systems. Its robust construction ensures reliable operation even under extreme temperatures and voltage fluctuations. Engineers will appreciate its straightforward installation and compatibility with various drive circuits. Upgrade your power management systems with the NGTB35N60FL2WG and experience unmatched performance. Contact us today for more details and pricing options.
General specs
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 70 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A
- Power - Max: 300 W
- Switching Energy: 840µJ (on), 280µJ (off)
- Input Type: Standard
- Gate Charge: 125 nC
- Td (on/off) @ 25°C: 72ns/132ns
- Test Condition: 400V, 35A, 10Ohm, 15V
- Reverse Recovery Time (trr): 68 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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