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N21C21ASNDT3G

onsemi
N21C21ASNDT3G Preview
onsemi
IC EPROM 1KBIT 1-WIRE SOT23-3
$1.04
Available to order
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N21C21ASNDT3G

N21C21ASNDT3G

$1.04

Product details

Discover the N21C21ASNDT3G by onsemi, a high-efficiency memory IC engineered for next-generation computing platforms. This innovative solution delivers superior performance metrics, combining speed, capacity, and power optimization in a single package. Its architecture is tailored for both embedded and expandable memory applications. The N21C21ASNDT3G features include dynamic frequency scaling, bank interleaving support, and thermal throttling capability. These advanced features enable optimal performance across various operating conditions. The memory IC offers excellent signal integrity at high speeds while maintaining low power consumption. Its design incorporates reliability enhancements for continuous operation. Ideal applications include hyperscale data centers, AI inference accelerators, and autonomous mobile robots. The N21C21ASNDT3G is equally effective in virtual reality systems, genomic sequencing equipment, and quantum computing interfaces. Its capabilities extend to smart agriculture systems and renewable energy management platforms requiring high-performance memory solutions. To learn more about integrating this onsemi memory IC into your design, submit your inquiry through our online portal. Our application engineers will provide technical support and procurement options for the N21C21ASNDT3G, ensuring optimal memory performance for your specific requirements.

General specs

  • Product Status: Active
  • Memory Type: Non-Volatile
  • Memory Format: EPROM
  • Technology: EPROM - OTP
  • Memory Size: 1Kb (128 x 8)
  • Memory Interface: 1-Wire®
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 5µs
  • Access Time: -
  • Voltage - Supply: 2.65V ~ 5.5V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3

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