MUN5312DW1T1G
onsemi
onsemi
TRANS PREBIAS NPN/PNP SOT363
$0.30
Available to order
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MUN5312DW1T1G
$0.30
Product details
Upgrade your electronic projects with the MUN5312DW1T1G from onsemi, a superior pre-biased bipolar junction transistor (BJT) array. This product belongs to the Discrete Semiconductor Products category, specifically Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The MUN5312DW1T1G is designed to deliver high performance in amplification and switching tasks, offering reliability and efficiency. Its pre-biased configuration reduces circuit complexity and enhances functionality. The transistor array boasts excellent thermal management, ensuring stable performance in various environments. Perfect for use in power converters, audio amplifiers, and sensor circuits, the MUN5312DW1T1G provides consistent and accurate results. It is also commonly utilized in automotive electronics, medical devices, and smart home systems. With its high gain and low power consumption, the MUN5312DW1T1G is ideal for energy-efficient applications. The robust and compact design of this BJT array makes it a versatile choice for diverse projects. To learn more about the MUN5312DW1T1G and how it can benefit your designs, contact us for a detailed quote and expert advice.
General specs
- Product Status: Active
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 22kOhms
- Resistor - Emitter Base (R2): 22kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-88/SC70-6/SOT-363
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