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MUN5135DW1T1G

onsemi
MUN5135DW1T1G Preview
onsemi
TRANS PREBIAS 2PNP 50V SC88
$0.28
Available to order
Reference Price (USD)
3,000+
$0.04760
6,000+
$0.04161
15,000+
$0.03563
30,000+
$0.03363
75,000+
$0.03164
150,000+
$0.02831
Exquisite packaging
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onsemi MUN5135DW1T1G is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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MUN5135DW1T1G

MUN5135DW1T1G

$0.28

Product details

Upgrade your electronic projects with the MUN5135DW1T1G from onsemi, a superior pre-biased bipolar junction transistor (BJT) array. This product belongs to the Discrete Semiconductor Products category, specifically Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The MUN5135DW1T1G is designed to deliver high performance in amplification and switching tasks, offering reliability and efficiency. Its pre-biased configuration reduces circuit complexity and enhances functionality. The transistor array boasts excellent thermal management, ensuring stable performance in various environments. Perfect for use in power converters, audio amplifiers, and sensor circuits, the MUN5135DW1T1G provides consistent and accurate results. It is also commonly utilized in automotive electronics, medical devices, and smart home systems. With its high gain and low power consumption, the MUN5135DW1T1G is ideal for energy-efficient applications. The robust and compact design of this BJT array makes it a versatile choice for diverse projects. To learn more about the MUN5135DW1T1G and how it can benefit your designs, contact us for a detailed quote and expert advice.

General specs

  • Product Status: Active
  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 2.2kOhms
  • Resistor - Emitter Base (R2): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363

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