MUN2235T1G
onsemi
onsemi
TRANS PREBIAS NPN 50V SC59-3
$0.02
Available to order
Reference Price (USD)
15,000+
$0.02373
Exquisite packaging
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MUN2235T1G
$0.02
Product details
The MUN2235T1G from onsemi is a high-performance Bipolar Junction Transistor (BJT) designed for precision applications. This pre-biased single transistor offers reliable switching and amplification, making it ideal for low-power circuits. With optimized thermal performance and consistent operation, it ensures stability in various electronic designs. The compact form factor and robust construction cater to modern PCB layouts. Key features include integrated bias resistors for simplified circuit design, low saturation voltage for energy efficiency, and high current gain for enhanced signal processing. Typical applications include automotive control modules, IoT sensor interfaces, and portable medical devices. Upgrade your projects with the MUN2235T1G submit your inquiry today for bulk pricing and datasheets.
General specs
- Product Status: Active
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 2.2 kOhms
- Resistor - Emitter Base (R2): 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 230 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SC-59
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