MUN2137T1G
onsemi
        
                
                                onsemi                            
                        
                                TRANS PREBIAS PNP 230MW SC59                            
                        $0.02
                            
                                
                                Available to order
                            
                        Reference Price (USD)
1+
                                            $0.02459
                                        500+
                                            $0.0243441
                                        1000+
                                            $0.0240982
                                        1500+
                                            $0.0238523
                                        2000+
                                            $0.0236064
                                        2500+
                                            $0.0233605
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                            Product details
The MUN2137T1G represents onsemi's commitment to precision in pre-biased transistor technology. This BJT solution simplifies circuit prototyping with its internally set operating point, eliminating trim potentiometers in amplifier stages. Key attributes include low quiescent current for battery-powered devices, high noise immunity for RF applications, and symmetrical switching times for digital logic interfaces. Real-world implementations range from automotive lighting controls to renewable energy monitoring systems and building automation networks. Its gull-wing leads facilitate visual inspection during quality control processes. Elevate your design's reliability   access technical resources and procurement options by inquiring about the MUN2137T1G today.
                General specs
- Product Status: Active
 - Transistor Type: PNP - Pre-Biased
 - Current - Collector (Ic) (Max): 100 mA
 - Voltage - Collector Emitter Breakdown (Max): 50 V
 - Resistor - Base (R1): 47 kOhms
 - Resistor - Emitter Base (R2): 22 kOhms
 - DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
 - Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
 - Current - Collector Cutoff (Max): 500nA
 - Frequency - Transition: -
 - Power - Max: 230 mW
 - Mounting Type: Surface Mount
 - Package / Case: TO-236-3, SC-59, SOT-23-3
 - Supplier Device Package: SC-59
 
