MMUN2111LT1G
onsemi
onsemi
TRANS PREBIAS PNP 50V SOT23-3
$0.15
Available to order
Reference Price (USD)
3,000+
$0.02297
6,000+
$0.02079
15,000+
$0.01818
30,000+
$0.01643
75,000+
$0.01469
150,000+
$0.01237
Exquisite packaging
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MMUN2111LT1G
$0.15
Product details
Precision-engineered for signal integrity, onsemi's MMUN2111LT1G pre-biased BJT offers predictable gain characteristics critical for feedback systems. The transistor's monolithic construction ensures perfect resistor matching, eliminating thermal drift issues in differential amplifiers. Target applications include industrial process control instrumentation, laboratory equipment signal paths, and avionics data acquisition modules. Its gold-bonded leads provide corrosion resistance in high-humidity environments, while the halogen-free mold compound meets ecological directives. The device supports high-frequency operation up to VHF ranges when properly impedance-matched. Access reference designs incorporating MMUN2111LT1G by submitting a project brief through our engineering collaboration portal.
General specs
- Product Status: Active
- Transistor Type: PNP - Pre-Biased + Diode
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 10 kOhms
- Resistor - Emitter Base (R2): 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 246 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
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