MMBT6429LT1G
onsemi
onsemi
TRANS NPN 45V 0.2A SOT23-3
$0.21
Available to order
Reference Price (USD)
3,000+
$0.03864
6,000+
$0.03360
15,000+
$0.02856
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$0.02688
75,000+
$0.02520
150,000+
$0.02240
Exquisite packaging
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MMBT6429LT1G
$0.21
Product details
Optimize your circuit performance with the MMBT6429LT1G, a precision Bipolar Junction Transistor from onsemi. This single BJT in the Discrete Semiconductor Products lineup delivers exceptional gain bandwidth product for high-frequency applications. The transistor's low base-emitter voltage requirement enhances energy efficiency in battery-powered devices. Its symmetrical current handling capabilities support bidirectional circuit designs when needed. The MMBT6429LT1G exhibits excellent parameter matching, crucial for differential amplifier stages. Typical implementations include sensor interfaces, signal conditioning circuits, and pulse generators. Aerospace systems, marine electronics, and scientific instrumentation benefit from this BJT's reliable operation. The component undergoes rigorous testing for parameter stability and long-term reliability. Its moisture-resistant packaging ensures performance in humid environments. onsemi employs state-of-the-art fabrication techniques to maintain consistent quality across production runs. The MMBT6429LT1G combines cutting-edge semiconductor technology with practical design features. For detailed specifications and purchasing information, complete our online contact form to connect with a product specialist.
General specs
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 200 mA
- Voltage - Collector Emitter Breakdown (Max): 45 V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 100µA, 5V
- Power - Max: 225 mW
- Frequency - Transition: 700MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
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