MMBFU310LT1G
onsemi
onsemi
JFET N-CH 25V 0.225W SOT23-3
$0.51
Available to order
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MMBFU310LT1G
$0.51
Product details
Enhance your circuit designs with the MMBFU310LT1G JFET transistor from onsemi, a standout in the Discrete Semiconductor Products lineup. This transistor is optimized for low-noise applications, offering exceptional signal clarity and efficiency. Its design focuses on minimizing power loss while maximizing performance, making it a preferred choice for battery-operated devices. The MMBFU310LT1G excels in environments where signal integrity is paramount, such as in instrumentation and measurement systems. Features like high gain and low leakage current ensure reliable operation in demanding scenarios. Applications span across audio processing, signal conditioning, and RF modulation. Industries leveraging this technology include consumer electronics, aerospace, and industrial automation. The MMBFU310LT1G is also well-suited for use in test and measurement equipment, where accuracy is critical. To explore how this JFET transistor can benefit your projects, contact us for a detailed quote and technical support.
General specs
- Product Status: Active
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 25 V
- Drain to Source Voltage (Vdss): 25 V
- Current - Drain (Idss) @ Vds (Vgs=0): 24 mA @ 10 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 2.5 V @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V (VGS)
- Resistance - RDS(On): -
- Power - Max: 225 mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
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