MMBFJ175LT1G
onsemi
onsemi
JFET P-CH 30V 0.225W SOT23-3
$0.40
Available to order
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MMBFJ175LT1G
$0.40
Product details
The MMBFJ175LT1G by onsemi is a premium JFET transistor designed for high-frequency applications within the Discrete Semiconductor Products range. Its advanced architecture ensures minimal signal loss and superior linearity, making it perfect for RF and microwave circuits. This transistor is built to handle rigorous operational demands, offering long-term stability and performance consistency. Key attributes include low noise figure, high transition frequency, and excellent thermal management. These features make the MMBFJ175LT1G ideal for use in wireless communication systems, radar, and satellite technology. Additionally, it finds applications in medical imaging devices and scientific instrumentation, where precision is non-negotiable. The automotive sector also benefits from its reliability in harsh environments. For engineers seeking a dependable JFET transistor, the MMBFJ175LT1G delivers unmatched quality. Request a quote now to integrate this high-performance component into your next design.
General specs
- Product Status: Active
- FET Type: P-Channel
- Voltage - Breakdown (V(BR)GSS): 30 V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 7 mA @ 15 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 3 V @ 10 nA
- Input Capacitance (Ciss) (Max) @ Vds: 11pF @ 10V (VGS)
- Resistance - RDS(On): 125 Ohms
- Power - Max: 225 mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
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