MJE5851G
onsemi
onsemi
TRANS PNP 350V 8A TO220
$3.95
Available to order
Reference Price (USD)
1+
$3.14000
50+
$2.67340
100+
$2.29090
500+
$1.89800
1,000+
$1.58783
Exquisite packaging
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MJE5851G
$3.95
Product details
Discover the MJE5851G, a high-efficiency Bipolar Junction Transistor from onsemi designed for precision electronic applications. As part of the Discrete Semiconductor Products range, this single BJT transistor offers excellent linearity and switching performance. The device features optimized electron mobility for enhanced signal fidelity in amplification circuits. Its symmetrical structure allows for flexible configuration in various circuit topologies. The MJE5851G demonstrates remarkable stability across temperature variations, ensuring consistent operation. Common implementations include voltage regulators, oscillator circuits, and impedance matching networks. Industrial automation, audio equipment, and power supply designs frequently incorporate this reliable transistor. The component's durable packaging protects against mechanical stress and environmental factors. With its straightforward integration and proven reliability, the MJE5851G simplifies circuit design challenges. onsemi's commitment to quality means you receive a product that meets rigorous industry standards. Interested in testing this BJT in your application? Request a quote through our online portal for prompt assistance from our sales team.
General specs
- Product Status: Last Time Buy
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 8 A
- Voltage - Collector Emitter Breakdown (Max): 350 V
- Vce Saturation (Max) @ Ib, Ic: 5V @ 3A, 8A
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V
- Power - Max: 80 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
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