MJE170G
onsemi
onsemi
TRANS PNP 40V 3A TO126
$0.88
Available to order
Reference Price (USD)
1+
$0.60000
10+
$0.51000
100+
$0.38100
500+
$0.29938
1,000+
$0.23134
Exquisite packaging
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MJE170G
$0.88
Product details
Upgrade your electronic designs with the MJE170G, a high-reliability Bipolar Junction Transistor from onsemi. This single BJT in the Discrete Semiconductor Products range offers exceptional linear amplification characteristics for precision analog circuits. The device features low harmonic distortion and excellent phase response, making it ideal for audio and instrumentation applications. Its robust construction withstands electrical stress and thermal cycling without performance degradation. The MJE170G demonstrates consistent current gain across its operating range, simplifying circuit stabilization. Common uses include microphone preamplifiers, medical monitoring equipment, and precision voltage references. Broadcast systems, laboratory instruments, and high-end audio components benefit from this transistor's clean signal reproduction. onsemi subjects each MJE170G unit to comprehensive electrical testing before shipment. The transistor's lead frame design optimizes thermal dissipation in high-duty-cycle applications. With its combination of technical excellence and manufacturing quality, the MJE170G delivers outstanding value. Contact our sales team through the website inquiry form to discuss your specific requirements and procurement options.
General specs
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 3 A
- Voltage - Collector Emitter Breakdown (Max): 40 V
- Vce Saturation (Max) @ Ib, Ic: 1.7V @ 600mA, 3A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V
- Power - Max: 1.5 W
- Frequency - Transition: 50MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126
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