J113_D27Z
onsemi
onsemi
JFET N-CH 35V 625MW TO92
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
onsemi J113_D27Z is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
J113_D27Z
$0.00
Product details
The J113_D27Z from onsemi is a high-performance JFET transistor designed for precision amplification and switching applications. As part of the Discrete Semiconductor Products category, this transistor offers excellent noise performance and low power consumption, making it ideal for sensitive electronic circuits. Its robust construction ensures reliability in various operating conditions, catering to both industrial and commercial needs. The J113_D27Z is engineered to deliver consistent performance, providing stable operation across a wide range of frequencies. Whether you're designing audio equipment or RF systems, this JFET transistor is a versatile choice. Key features include high input impedance, low distortion, and superior thermal stability. These characteristics make it suitable for applications requiring minimal signal interference and high fidelity. Common uses include audio preamplifiers, sensor interfaces, and communication systems. Industries such as telecommunications, medical devices, and automotive electronics benefit from its precision and durability. For pricing and availability, submit an inquiry today and let our team assist you with your procurement needs.
General specs
- Product Status: Obsolete
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 35 V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 µA
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): 100 Ohms
- Power - Max: 625 mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package: TO-92-3
Viewed products
