HGT1S10N120BNST
onsemi
onsemi
IGBT 1200V 35A 298W TO263AB
$2.85
Available to order
Reference Price (USD)
800+
$1.89606
1,600+
$1.61366
2,400+
$1.54125
Exquisite packaging
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HGT1S10N120BNST
$2.85
Product details
Maximize power efficiency with the HGT1S10N120BNST single IGBT transistor by onsemi. This high-quality component is engineered for applications requiring robust switching and thermal stability, such as renewable energy systems, industrial welding machines, and electric vehicle powertrains. The HGT1S10N120BNST features low switching losses and high current capacity, ensuring reliable performance in demanding conditions. Its compact design and ease of integration make it a favorite among power electronics designers. Whether you're working on large-scale industrial projects or compact consumer electronics, the HGT1S10N120BNST delivers the performance you need. Get started today by submitting an online inquiry for pricing and availability.
General specs
- Product Status: Active
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 35 A
- Current - Collector Pulsed (Icm): 80 A
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A
- Power - Max: 298 W
- Switching Energy: 320µJ (on), 800µJ (off)
- Input Type: Standard
- Gate Charge: 100 nC
- Td (on/off) @ 25°C: 23ns/165ns
- Test Condition: 960V, 10A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D²PAK (TO-263)
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