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H11F1M

onsemi
H11F1M Preview
onsemi
OPTOISOLTR 7.5KV PHOTO FET 6-DIP
$5.70
Available to order
Reference Price (USD)
1+
$3.63000
10+
$3.02500
100+
$2.17800
500+
$1.75450
1,000+
$1.60930
Exquisite packaging
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H11F1M

H11F1M

$5.70

Product details

onsemi's H11F1M represents the next generation of optoisolator technology, combining transistor and photovoltaic outputs for versatile circuit isolation solutions. This advanced component provides galvanic isolation that prevents ground loops and protects sensitive electronics from potentially damaging voltage differences. The optoisolator features optimized response times and excellent linearity for accurate signal transmission across its isolation barrier. Its energy-efficient design minimizes power consumption without compromising performance, making it suitable for battery-powered applications. The H11F1M excels in harsh industrial environments thanks to its wide operating temperature range and vibration-resistant construction. Typical implementations include industrial motor drives, solar power inverters, and automotive control modules. Medical device manufacturers rely on its reliable isolation for patient-connected equipment, while automation engineers value its consistent performance in PLC systems. For detailed specifications or to discuss your application requirements, our technical team is ready to assist with your H11F1M selection.

General specs

  • Product Status: Active
  • Number of Channels: 1
  • Voltage - Isolation: 7500Vpk
  • Current Transfer Ratio (Min): -
  • Current Transfer Ratio (Max): -
  • Turn On / Turn Off Time (Typ): 45µs, 45µs (Max)
  • Rise / Fall Time (Typ): -
  • Input Type: DC
  • Output Type: MOSFET
  • Voltage - Output (Max): 30V
  • Current - Output / Channel: -
  • Voltage - Forward (Vf) (Typ): 1.3V
  • Current - DC Forward (If) (Max): 60 mA
  • Vce Saturation (Max): -
  • Operating Temperature: -40°C ~ 100°C
  • Mounting Type: Through Hole
  • Package / Case: 6-DIP (0.300", 7.62mm)
  • Supplier Device Package: 6-DIP

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