Shopping cart

Subtotal: $0.00

FQD13N06LTM

onsemi
FQD13N06LTM Preview
onsemi
MOSFET N-CH 60V 11A DPAK
$0.78
Available to order
Reference Price (USD)
2,500+
$0.25865
5,000+
$0.24176
12,500+
$0.23332
25,000+
$0.22872
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

onsemi FQD13N06LTM is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
FQD13N06LTM

FQD13N06LTM

$0.78

Product details

onsemi's FQD13N06LTM stands out in the Discrete Semiconductor Products market as a top-tier single MOSFET transistor in the Transistors - FETs, MOSFETs - Single segment. This component combines cutting-edge semiconductor technology with practical design features for superior electrical performance. The FQD13N06LTM demonstrates exceptional characteristics including low gate charge, excellent switching behavior, and reliable overcurrent protection. These features translate to reduced power losses and extended device lifespan in your applications. The transistor's robust construction ensures stable operation in challenging environmental conditions, from temperature extremes to mechanical stress. Industrial engineers will appreciate its versatility in robotics control systems, welding equipment, and power tool applications. For consumer electronics, it's perfect for high-end audio systems, gaming consoles, and smart home devices. The FQD13N06LTM also performs exceptionally in renewable energy applications such as solar inverters and wind turbine controls. With its balanced performance metrics, this MOSFET provides the ideal solution for your power management needs. Ready to incorporate this high-quality component into your designs? Submit your inquiry through our user-friendly online platform for quick response and competitive pricing options.

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Rds On (Max) @ Id, Vgs: 115mOhm @ 5.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 5 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Viewed products

Taiwan Semiconductor Corporation

TSM090N03ECP ROG

$0.00 (not set)
Infineon Technologies

IRFB5615PBF

$0.00 (not set)
Infineon Technologies

AUIRFS3006-7TRL

$0.00 (not set)
Diodes Incorporated

DMT6030LFDF-7

$0.00 (not set)
onsemi

NVMFS5A140PLZWFT1G

$0.00 (not set)
Nexperia USA Inc.

PSMN1R9-40YSDX

$0.00 (not set)
Infineon Technologies

IPI80N04S3-03

$0.00 (not set)
NXP USA Inc.

BUK9509-75A,127

$0.00 (not set)
Diodes Incorporated

DMP2002UPS-13

$0.00 (not set)
onsemi

NTMFS0D9N03CGT1G

$0.00 (not set)
Top