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FQB33N10TM

onsemi
FQB33N10TM Preview
onsemi
MOSFET N-CH 100V 33A D2PAK
$1.60
Available to order
Reference Price (USD)
800+
$0.81929
1,600+
$0.74402
2,400+
$0.69699
5,600+
$0.66406
Exquisite packaging
Discount
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DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

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FQB33N10TM

FQB33N10TM

$1.60

Product details

General specs

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 52mOhm @ 16.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
  • Vgs (Max): ±25V
  • Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 3.75W (Ta), 127W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK (TO-263)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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