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FQA8N100C

onsemi
FQA8N100C Preview
onsemi
MOSFET N-CH 1000V 8A TO3PN
$5.00
Available to order
Reference Price (USD)
1+
$4.58000
10+
$4.09200
450+
$3.02829
900+
$2.45537
1,350+
$2.29167
Exquisite packaging
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FQA8N100C

FQA8N100C

$5.00

Product details

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000 V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1.45Ohm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 225W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PN
  • Package / Case: TO-3P-3, SC-65-3

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