FJV3101RMTF
onsemi
        
                
                                onsemi                            
                        
                                TRANS PREBIAS NPN 200MW SOT23-3                            
                        $0.03
                            
                                
                                Available to order
                            
                        Reference Price (USD)
3,000+
                                            $0.04058
                                        6,000+
                                            $0.03548
                                        15,000+
                                            $0.03038
                                        30,000+
                                            $0.02867
                                        75,000+
                                            $0.02697
                                        150,000+
                                            $0.02414
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onsemi FJV3101RMTF is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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                            Product details
The FJV3101RMTF represents onsemi's commitment to precision in pre-biased transistor technology. This BJT solution simplifies circuit prototyping with its internally set operating point, eliminating trim potentiometers in amplifier stages. Key attributes include low quiescent current for battery-powered devices, high noise immunity for RF applications, and symmetrical switching times for digital logic interfaces. Real-world implementations range from automotive lighting controls to renewable energy monitoring systems and building automation networks. Its gull-wing leads facilitate visual inspection during quality control processes. Elevate your design's reliability   access technical resources and procurement options by inquiring about the FJV3101RMTF today.
                General specs
- Product Status: Obsolete
 - Transistor Type: NPN - Pre-Biased
 - Current - Collector (Ic) (Max): 100 mA
 - Voltage - Collector Emitter Breakdown (Max): 50 V
 - Resistor - Base (R1): 4.7 kOhms
 - Resistor - Emitter Base (R2): 4.7 kOhms
 - DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 5V
 - Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
 - Current - Collector Cutoff (Max): 100nA (ICBO)
 - Frequency - Transition: 250 MHz
 - Power - Max: 200 mW
 - Mounting Type: Surface Mount
 - Package / Case: TO-236-3, SC-59, SOT-23-3
 - Supplier Device Package: SOT-23-3
 
