FGH80N60FD2TU
onsemi
onsemi
IGBT 600V 80A 290W TO247
$5.28
Available to order
Reference Price (USD)
1+
$4.84000
10+
$4.36500
450+
$3.42678
900+
$3.09044
1,350+
$2.63016
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FGH80N60FD2TU
$5.28
Product details
The FGH80N60FD2TU from onsemi is a high-performance single IGBT transistor designed for efficient power switching. This discrete semiconductor product is widely used in UPS systems, induction heating, and electric vehicle applications. With its low saturation voltage and excellent thermal management, the FGH80N60FD2TU ensures minimal energy loss and maximum reliability. Its compact design and easy integration make it a versatile choice for various power electronics projects. Engineers will find its high current handling and fast switching capabilities invaluable. Discover the potential of the FGH80N60FD2TU for your applications request a quote today.
General specs
- Product Status: Active
- IGBT Type: Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 160 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
- Power - Max: 290 W
- Switching Energy: 1mJ (on), 520µJ (off)
- Input Type: Standard
- Gate Charge: 120 nC
- Td (on/off) @ 25°C: 21ns/126ns
- Test Condition: 400V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr): 61 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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