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FFSM1065B

onsemi
FFSM1065B Preview
onsemi
SILICON CARBIDE DIODE 650V 10A P
$4.40
Available to order
Reference Price (USD)
1+
$4.40000
500+
$4.356
1000+
$4.312
1500+
$4.268
2000+
$4.224
2500+
$4.18
Exquisite packaging
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FFSM1065B

FFSM1065B

$4.40

Product details

Experience superior rectification performance with the FFSM1065B single diode from onsemi, engineered for excellence in power electronics. This component offers an optimal balance between forward voltage characteristics and reverse leakage current, ensuring efficient energy conversion. The diode's advanced construction provides excellent thermal stability and long-term reliability in continuous operation. Designers will appreciate its versatility in applications ranging from consumer appliances to industrial power systems. The FFSM1065B performs exceptionally well in UPS systems, electric vehicle power trains, and renewable energy converters. Its robust design withstands electrical transients and mechanical stress, making it ideal for transportation and infrastructure applications. Additional benefits include consistent batch-to-batch performance and compatibility with automated assembly processes. For engineers seeking a reliable rectification solution, the FFSM1065B delivers outstanding results. Contact us today to learn more about this high-performance diode and its applications.

General specs

  • Product Status: Active
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 13.5A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 40 µA @ 650 V
  • Capacitance @ Vr, F: 424pF @ 1V, 100kHz
  • Mounting Type: Surface Mount
  • Package / Case: 4-PowerTSFN
  • Supplier Device Package: 4-PQFN (8x8)
  • Operating Temperature - Junction: -55°C ~ 175°C

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