Shopping cart

Subtotal: $0.00

FDC6561AN

onsemi
FDC6561AN Preview
onsemi
MOSFET 2N-CH 30V 2.5A SSOT6
$0.60
Available to order
Reference Price (USD)
3,000+
$0.20920
6,000+
$0.19571
15,000+
$0.18221
30,000+
$0.17276
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

onsemi FDC6561AN is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
FDC6561AN

FDC6561AN

$0.60

Product details

The FDC6561AN by onsemi is a premium MOSFET array in the Discrete Semiconductor Products category, specifically under Transistors - FETs, MOSFETs - Arrays. This product is engineered for high-efficiency power switching, making it ideal for advanced electronic systems.\n\nNotable features of the FDC6561AN include optimized switching performance, low on-resistance, and excellent thermal conductivity. The array configuration allows for compact and efficient designs, reducing overall system complexity. Its high reliability ensures long-term performance in various applications.\n\nApplications include data centers, automotive infotainment, and portable devices. Data centers benefit from its efficiency in power distribution. Automotive infotainment systems rely on its performance for audio and display controls. Portable devices utilize its compact size and low power consumption.\n\nExplore the benefits of the FDC6561AN. Request a quote today to learn more about how it can enhance your designs. Our team is ready to assist with your technical and procurement needs.

General specs

  • Product Status: Active
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A
  • Rds On (Max) @ Id, Vgs: 95mOhm @ 2.5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V
  • Power - Max: 700mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: SuperSOT™-6

Viewed products

Diodes Incorporated

DMG4822SSD-13

$0.00 (not set)
Texas Instruments

CSD87384M

$0.00 (not set)
Vishay Siliconix

SQJ910AEP-T1_BE3

$0.00 (not set)
Infineon Technologies

IRF7319TRPBF

$0.00 (not set)
Rohm Semiconductor

QH8MA4TCR

$0.00 (not set)
Vishay Siliconix

SI4936CDY-T1-GE3

$0.00 (not set)
Rohm Semiconductor

BSM600D12P3G001

$0.00 (not set)
Fairchild Semiconductor

NDS8936

$0.00 (not set)
Renesas Electronics America Inc

UPA2451BTL-E1-A

$0.00 (not set)
Sanken

SLA5075

$0.00 (not set)
Top