FCP850N80Z
onsemi
onsemi
MOSFET N-CH 800V 8A TO220-3
$1.66
Available to order
Reference Price (USD)
800+
$0.99534
Exquisite packaging
Discount
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| TNT | 2-6 days |
| EMS | 3-7 days |
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FCP850N80Z
$1.66
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 850mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 600µA
- Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 136W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
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