FCP110N65F
onsemi
onsemi
MOSFET N-CH 650V 35A TO220-3
$4.55
Available to order
Reference Price (USD)
1+
$4.62000
10+
$4.14200
100+
$3.42020
800+
$2.53779
1,600+
$2.37735
Exquisite packaging
Discount
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FCP110N65F
$4.55
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 110mOhm @ 17.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 3.5mA
- Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4895 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 357W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
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