Shopping cart

Subtotal: $0.00

FCA22N60N

onsemi
FCA22N60N Preview
onsemi
MOSFET N-CH 600V 22A TO3PN
$8.05
Available to order
Reference Price (USD)
1+
$5.89000
10+
$5.27500
450+
$3.94696
900+
$3.23188
1,350+
$3.02756
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

onsemi FCA22N60N is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
FCA22N60N

FCA22N60N

$8.05

Product details

Enhance your electronic designs with the FCA22N60N single MOSFET transistor from onsemi, a premium Discrete Semiconductor Product in the Transistors - FETs, MOSFETs - Single classification. This power-efficient component excels in switching applications, delivering robust performance with minimal energy loss. The FCA22N60N features an optimized gate drive characteristic that ensures smooth operation across various voltage ranges. Its compact design doesn't compromise on power handling capabilities, making it suitable for space-constrained applications. Notable advantages include superior noise immunity, stable operation under varying load conditions, and enhanced electrostatic discharge protection. These qualities make the FCA22N60N particularly valuable for medical equipment, telecommunications infrastructure, and aerospace electronics. Implement this MOSFET in your next project involving DC-DC converters, load switches, or power distribution systems. The component's reliability and efficiency will significantly improve your system's overall performance. For engineers seeking quality MOSFET solutions, the FCA22N60N represents an excellent choice. Visit our website to request a quote or submit your inquiry directly through our online portal for prompt assistance.

General specs

  • Product Status: Last Time Buy
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 165mOhm @ 11A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 100 V
  • FET Feature: -
  • Power Dissipation (Max): 205W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PN
  • Package / Case: TO-3P-3, SC-65-3

Viewed products

Vishay Siliconix

IRFU9220PBF

$0.00 (not set)
Alpha & Omega Semiconductor Inc.

AOWF7S65

$0.00 (not set)
onsemi

FQA6N90C-F109

$0.00 (not set)
onsemi

NVMFS5C450NLWFAFT1G

$0.00 (not set)
IXYS

IXFN210N30X3

$0.00 (not set)
Diodes Incorporated

DMP2022LSSQ-13

$0.00 (not set)
Infineon Technologies

AUIRFB8405

$0.00 (not set)
Vishay Siliconix

SIR608DP-T1-RE3

$0.00 (not set)
Rohm Semiconductor

RQ7E100ATTCR

$0.00 (not set)
Rohm Semiconductor

RS3E075ATTB

$0.00 (not set)
Top